dmn6066sss document number ds33047 rev. 3 - 2 1 of 9 www.diodes.com april 2015 ? diodes incorporated dmn 6066s s s advance information 60v n-channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = +25c 60v 66m @ v gs = 10v 5.0a 97m @ v gs = 4.5v 4.1a description and applications this mosfet is designed to minimize the on-state re sistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? motor control ? backlighting ? dc-dc converters ? power management functions features and benefits ? low on-resistance ? fast switching speed ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliabilit y ? ppap capable (note 4) mechanical data ? case: so-8 ? case material: molded plastic, ?green? molding com pound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals connections: see diagram below ? terminals: finish ? tin finish annealed over coppe r leadframe. solderable per mil-std-202, method 208 ? weight: 0.074 grams (approximate) ordering information (notes 4 & 5) part number compliance case packaging DMN6066SSS-13 commercial so-8 2,500/tape & reel dmn6066sssq-13 automotive so-8 2,500/tape & reel notes: 1. no purposely added lead. fully eu directi ve 2002/95/ec (rohs) & 2011/65/eu (rohs 2) complian t. 2. see http://www.diodes.com/quality/lead_free.htm l for more information about diodes incorporated?s definitions of halogen- and antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <9 00ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec-q101 qualified and are ppap capable. automotive, aec-q101 and standard products are electrically and thermally the same, except where specified. for more information , please refer to http://www.diodes.com/quality/pro duct_grade_definitions/. 5. for packaging details, go to our website at htt p://www.diodes.com/products/packages.html. marking information top view d s g equivalent circuit top view so-8 = manufacturer?s marking n6066ss = product type marking code yyww = date code marking yy = year (ex: 09 = 2009) ww = week (01 - 53) n6066ss yy ww so-8
dmn6066sss document number ds33047 rev. 3 - 2 2 of 9 www.diodes.com april 2015 ? diodes incorporated dmn 6066s s s advance information maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss 60 v gate-source voltage (note 6) v gs 20 v single pulsed avalanche energy (note 11) e as 37.5 mj single pulsed avalanche current (note 11) i as 5.0 a continuous drain current v gs = 10v (note 8) i d 5.0 a t a = +70c (note 8) 4.0 (note 7) 3.7 pulsed drain current v gs = 10v (note 9) i dm 23 a continuous source current (body diode) (note 8) i s 4.0 a pulsed source current (body diode) (note 9) i sm 23 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation linear derating factor (note 7) p d 1.56 12.5 w mw/c (note 8) 2.81 22.5 thermal resistance, junction to ambient (note 7) r ja 80.0 c/w (note 8) 44.5 thermal resistance, junction to lead (note 10) r jl 37.0 operating and storage temperature range t j , t stg -55 to 150 c notes: 6. aec-q101 v gs maximum is 16v. 7. for a device surface mounted on 25mm x 25mm x 1. 6mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state cond ition. 8. same as note (7), except the device is measured at t 10 sec. 9. same as note (7), except the device is pulsed wi th d= 0.02 and pulse width 300 s. the pulse curren t is limited by the maximum junction temperature. 10. thermal resistance from junction to solder-poin t (at the end of the drain lead). 11. uis in production with l = 3.0mh, i as = 5.0a, r g = 25 , v dd =50v, starting t j = +25c.
dmn6066sss document number ds33047 rev. 3 - 2 3 of 9 www.diodes.com april 2015 ? diodes incorporated dmn 6066s s s advance information thermal characteristics 100m 1 10 1m 10m 100m 1 10 single pulse t amb =25c r ds(on) limited 100s 1ms 10ms 100ms 1s dc safe operating area i d drain current (a) v ds drain-source voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25mm x 25mm 1oz fr4 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 70 80 t amb =25c transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse t amb =25c pulse power dissipation pulse width (s) maximum power (w)
dmn6066sss document number ds33047 rev. 3 - 2 4 of 9 www.diodes.com april 2015 ? diodes incorporated dmn 6066s s s advance information electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test conditi on off characteristics drain-source breakdown voltage bv dss 60 ? ? v i d = 250a, v gs = 0v zero gate voltage drain current i dss ? ? 0.5 a v ds = 60v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics gate threshold voltage v gs(th) 1.0 ? 3.0 v i d = 250a, v ds = v gs static drain-source on-resistance (note 12) r ds (on) ? 0.048 0.066 v gs = 10v, i d = 4.5a 0.068 0.097 v gs = 4.5v, i d = 3.5a forward transconductance (notes 12 & 13) g fs ? 19.2 ? s v ds = 15v, i d = 6a diode forward voltage (note 12) v sd ? 0.89 1.15 v i s = 4.5a, v gs = 0v reverse recovery time (note 13) t rr 23 ? ns i s = 2.4a, di/dt = 100a/s reverse recovery charge (note 13) q rr ? 19.7 ? nc dynamic characteristics ( note 13 ) input capacitance c iss ? 502 ? pf v ds = 30v, v gs = 0v f = 1mhz output capacitance c oss ? 45.7 ? pf reverse transfer capacitance c rss ? 27.1 ? pf total gate charge (note 14) q g ? 5.4 ? nc v gs = 4.5v v ds = 30v i d = 4.5a total gate charge (note 14) q g ? 10.3 ? nc v gs = 10v gate-source charge (note 14) q gs ? 1.7 ? nc gate-drain charge (note 14) q gd ? 3.2 ? nc turn-on delay time (note 14) t d(on) ? 2.7 ? ns v dd = 30v, v gs = 10v i d = 1a, r g ? 6.0 turn-on rise time (note 14) t r ? 2.4 ? ns turn-off delay time (note 14) t d(off) ? 14.7 ? ns turn-off fall time (note 14) t f ? 5.4 ? ns notes: 12. measured under pulsed conditions. puls e width 300s; duty cycle 2%. 13. for design aid only, not subject to productio n testing. 14. switching characteristics are independent of operating junction temperatures.
dmn6066sss document number ds33047 rev. 3 - 2 5 of 9 www.diodes.com april 2015 ? diodes incorporated dmn 6066s s s advance information typical characteristics 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 1 2 3 4 5 1e-3 0.01 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0.1 1 10 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 0.01 0.1 1 10 4v 3.5v 10v 4.5v output characteristics t = 25c 3v v gs i d drain current (a) v ds drain-source voltage (v) 4.5v 3.5v 10v 4v 2v 2.5v 3v output characteristics t = 150c v gs i d drain current (a) v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t = 25c t = 150c i d drain current (a) v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 10v i d = 12a v gs(th) v gs = v ds i d = 250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 10v 3.5v 4v 3v on-resistance v drain current t = 25c 4.5v v gs r ds(on) drain-source on-resistance ( ) i d drain current (a) vgs = 0v t = 150c t = 25c source-drain diode forward voltage v sd source-drain voltage (v) i sd reverse drain current (a)
dmn6066sss document number ds33047 rev. 3 - 2 6 of 9 www.diodes.com april 2015 ? diodes incorporated dmn 6066s s s advance information typical characteristics (continued) 0.1 1 10 0 200 400 600 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) v ds - drain - source voltage (v) 0 2 4 6 8 10 0 2 4 6 8 10 v ds = 30v i d = 4.5a gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) v gs gate-source voltage (v)
dmn6066sss document number ds33047 rev. 3 - 2 7 of 9 www.diodes.com april 2015 ? diodes incorporated dmn 6066s s s advance information test circuits current regulator charge gate charge test circuit switching time test circuit basic gate charge waveform switching time waveforms d.u.t 50k 12v sameas d.u.t v gs v gs v ds v g q gs q gd q g v gs 9 0% 1 0% t (on) t (on) t d(on) t r t r t v ds dd v r d r g v ds i d i g d(off)
dmn6066sss document number ds33047 rev. 3 - 2 8 of 9 www.diodes.com april 2015 ? diodes incorporated dmn 6066s s s advance information package outline dimensions please see ap02002 at http://www.diodes.com/datashe ets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datashe ets/ap02001.pdf for the latest version. so - 8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 0 8 all dimensions in mm dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 gauge plane seating plane detail ?a? detail ?a? e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0.254 x c1 c2 y
dmn6066sss document number ds33047 rev. 3 - 2 9 of 9 www.diodes.com april 2015 ? diodes incorporated dmn 6066s s s advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranti es of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisd iction). diodes incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any cu stomer or user of this document or products describ ed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products pur chased through unauthorized sales channel. should customers purchase or use diodes incorporate d products for any unintended or unauthorized appli cation, customers shall indemnify and hold diodes incorporated and its representatives ha rmless against all claims, damages, expenses, and a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized appl ication. products described herein may be covered by one or more united states, international or foreign patent s pending. product names and markings noted herein may also be covered by one or more uni ted states, international or foreign trademarks. this document is written in english but may be tran slated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes i ncorporated. life support diodes incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to per form when properly used in accordance with instruct ions for use provided in the labeling can be reasonably expected to result in si gnificant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform c an be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary ex pertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsi ble for all legal, regulatory and safety-related re quirements concerning their products and any use of diodes incorporated products in such safety- critical, life support devices or systems, notwiths tanding any devices- or systems-related information or support that may be provided by diod es incorporated. further, customers must fully ind emnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such saf ety-critical, life support devices or systems. copyright ? 20 1 5 , diodes incorporated
|
